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參數(shù)資料
| 型號(hào)： | MMSF3P03HD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3 Amps, 30 Volts P-Channel(3A，30V，P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 功率MOSFET 3安培，30伏特P溝道條第（3A，30V的，P溝道增強(qiáng)型功率馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | MMSF3P03HD |
Publication Order Number:
MMSF3P03HD/D
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 6
1
MMSF3P03HD
Preferred Device
Power MOSFET
3 Amps, 30 Volts
P–Channel SO–8
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive – Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package – Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted) (Note 1.)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage – Continuous
Drain Current – Continuous @ TA = 25
°
C
Drain Current
– Continuous @ TA = 100
°
C
Drain Current
– Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C
(Note 2.)
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
Value
30
Unit
Vdc
30
±
20
4.6
3.0
50
Vdc
Vdc
Adc
Apk
2.5
Watts
Operating and Storage Temperature Range
– 55 to 150
°
C
mJ
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 20 Vdc, VGS = 5.0 Vdc,
IL = 9.0 Apk, L = 14
mH, RG = 25
)
Thermal Resistance – Junction to Ambient
(Note 2.)
EAS
567
R
θ
JA
50
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. Negative sign for P–Channel device omitted for clarity.
2. Mounted on 2
″
square FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided),
10 sec. max.
TL
260
°
C
N–C
1
2
3
4
8
7
6
5
Top View
Source
Source
Gate
Drain
Drain
Drain
Drain
D
S
G
1
8
3 AMPERES
30 VOLTS
RDS(on) = 100 m
Device
Package
Shipping
ORDERING INFORMATION
MMSF3P03HDR2
SO–8
2500 Tape & Reel
SO–8
CASE 751
STYLE 13
http://onsemi.com
P–Channel
LYWW
MARKING
DIAGRAM
S3P03
L
Y
WW
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
Preferred
devices are recommended choices for future use
and best overall value.
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