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參數(shù)資料
| 型號(hào)： | MMSF3P03HD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3 Amps, 30 Volts P-Channel(3A，30V，P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 功率MOSFET 3安培，30伏特P溝道條第（3A，30V的，P溝道增強(qiáng)型功率馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 132K |
| 代理商： | MMSF3P03HD |
MMSF3P03HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted) (Note 1.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
–
–
30
–
–
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
–
–
–
–
1.0
10
μ
Adc
IGSS
–
5.0
100
nAdc
ON CHARACTERISTICS
(Note 3.)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
1.0
–
1.5
3.9
2.0
–
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
–
–
0.080
0.090
0.100
0.110
Ohm
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)
gFS
3.0
5.0
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
–
1015
1420
pF
Output Capacitance
–
470
660
Transfer Capacitance
–
135
190
SWITCHING CHARACTERISTICS
(Note 4.)
Turn–On Delay Time
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
–
26
52
ns
Rise Time
(VDS = 15 Vdc, ID = 3.0 Adc,
VGS= 4 5 Vdc
VGS = 4.5 Vdc,
RG = 6.0
RG 6.0
)
–
102
204
Turn–Off Delay Time
–
67
134
Fall Time
–
69
138
Turn–On Delay Time
–
14
28
Rise Time
(VDS = 15 Vdc, ID = 3.0 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 6.0
RG 6.0
)
–
32
64
Turn–Off Delay Time
–
104
208
Fall Time
–
66
132
Gate Charge
–
32.4
45
nC
(VDS = 24 Vdc, ID = 3.0 Adc,
(VDS 24 Vdc, ID 3.0 Adc,
VGS = 10 Vdc)
–
2.7
–
–
9.0
–
–
6.9
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc,
TJ = 125
°
C)
VSD
–
–
1.3
0.85
2.0
–
Vdc
Reverse Recovery Time
trr
ta
tb
–
31
–
ns
(IS = 3.0 Adc,
(IS 3.0 Adc,
dIS/dt = 100 A/
μ
s)
–
22
–
–
9.0
–
Reverse Recovery Stored Charge
QRR
–
0.034
–
μ
C
1. Negative sign for P–Channel device omitted for clarity.
3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
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