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參數(shù)資料
| 型號(hào)： | MMDF6N03HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | DUAL TMOS POWER MOSFET 30 VOLTS |
| 中文描述： | 偶的TMOS功率MOSFET 30伏 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 207K |
| 代理商： | MMDF6N03HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
1.2
2.0
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
12
8.0
10
6.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4.5
5.0
1.5
8.0
4.0
2.0
0
8.0
10
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0.30
0.20
0.15
0.10
0.05
0
ID, DRAIN CURRENT (AMPS)
2.0
1.0
0.050
0.045
0.040
0.035
0.030
0.025
3.0
9.0
–25
25
–50
TJ, JUNCTION TEMPERATURE (
°
C)
1.2
0.8
0.6
0.4
0.2
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
5.0
30
0
1000
100
1.0
0.1
15
0
I
I
D
R
4.0
2.0
0
0.6
0.2
0.4
0.8
1.0
1.4
1.6
2.0
2.5
3.0
3.5
4.0
6.0
10
12
3.0
4.0
5.0
6.0
7.0
4.0
5.0
6.0
7.0
8.0
9.0
,
R
50
100
75
1.0
10
20
25
10
I
1.8
,
,
D
0.25
R
,
D
125
150
1.6
1.4
1.8
VGS = 10 V
ID = 3 A
VGS = 0 V
TJ = 125
°
C
100
°
C
25
°
C
TJ = 25
°
C
VGS = 4.5 V
10 V
TJ = 25
°
C
ID = 6 A
VDS
≥
10 V
TJ = –55
°
C
100
°
C
25
°
C
TJ = 25
°
C
2.7 V
2.9 V
3.1 V
3.3 V
3.5 V
VGS = 2.5 V
10 V
6.0 V
4.5 V
4.3 V
4.1 V
3.7 V
3.9 V
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