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參數(shù)資料
| 型號(hào)： | MMDF6N03HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | DUAL TMOS POWER MOSFET 30 VOLTS |
| 中文描述： | 偶的TMOS功率MOSFET 30伏 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 207K |
| 代理商： | MMDF6N03HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
30
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
20
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
—
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 5.0 Adc)
(VGS = 4.5 Vdc, ID = 3.9 Adc)
RDS(on)
—
—
28
42
35
50
m
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)
gFS
—
9.0
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc,
VGS = 0 Vdc,
1 0 MHz)
f = 1.0 MHz)
Ciss
Coss
Crss
—
430
600
pF
Output Capacitance
—
217
300
Transfer Capacitance
—
67.5
135
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD= 15 Vdc
(VDD = 15 Vdc,
VGS = 10 Vdc,
ID = 1.0 Adc,
RG= 6 0
RG = 6.0
)
td(on)
tr
td(off)
tf
td(on)
—
8.2
16.4
ns
Rise Time
—
8.48
16.9
Turn–Off Delay Time
—
89.6
179
Fall Time
—
61.1
122
Turn–On Delay Time
(VDD= 15 Vdc
VGS = 4.5 Vdc,
ID = 1.0 Adc,
RG= 6 0
RG = 6.0
)
—
11.8
23
ns
Rise Time
tr
—
51.3
102
Turn–Off Delay Time
td(off)
tf
QT
Q1
Q2
Q3
—
47.2
94.5
Fall Time
—
62
104
Gate Charge
(See Figure 8)
(VDS = 15 Vdc,
ID= 5 0 Adc
ID = 5.0 Adc,
VGS = 10 Vdc)
—
15.7
31.4
nC
—
2.0
—
—
4.6
—
—
3.86
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc,
TJ = 125
°
C)
VSD
—
—
0.77
0.65
1.2
—
Vdc
Reverse Recovery Time
(IS = 5.0 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
5 0 Ad
trr
ta
—
54.5
—
ns
—
14.8
—
,
tb
—
39.7
—
Reverse Recovery Stored Charge
QRR
—
0.048
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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