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參數資料
| 型號： | MMDF6N03HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | DUAL TMOS POWER MOSFET 30 VOLTS |
| 中文描述： | 偶的TMOS功率MOSFET 30伏 |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 207K |
| 代理商： | MMDF6N03HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
Dual HDTMOS devices are an advanced series of power
MOSFETs which utilize Motorola’s High Cell Density TMOS
process. These miniature surface mount MOSFETs feature low
RDS(on) and true logic level performance. Dual HDTMOS devices
are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applica-
tions are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular
and cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VGS
ID
IDM
IS
PD
TJ, Tstg
EAS
Value
30
±
20
6.0
30
Unit
Vdc
Vdc
Adc
Apk
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Source Current — Continuous @ TA = 25
°
C
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from Case for 10 sec.
DEVICE MARKING
D6N03
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
MMDF6N03HDR2
13
″
12 mm embossed tape
1.7
2.0
Adc
Watts
°
C
mJ
– 55 to 150
325
R
θ
JA
TL
62.5
260
°
C/W
°
C
Tape Width
Quantity
2500
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMDF6N03HD/D
SEMICONDUCTOR TECHNICAL DATA
Source–1
Gate–1
Source–2
Gate–2
1
2
3
4
8
7
6
5
Top View
Drain–1
Drain–1
Drain–2
Drain–2
D
S
G
CASE 751–05, Style 11
SO–8
DUAL TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 35 m
Motorola Preferred Device
D
S
G
REV 2
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相關代理商/技術參數 |
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|---|---|
| MMDF6N03HDR2 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 6 Amps, 30 Volts |
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