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參數(shù)資料
| 型號： | MMDF5N02Z |
| 廠商： | Motorola, Inc. |
| 英文描述： | DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS |
| 中文描述： | 偶的TMOS功率MOSFET 5.0安培20伏特 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 186K |
| 代理商： | MMDF5N02Z |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
I
R
R
0
0
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1.6
2
0
2
6
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.07
0.01
0
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 5. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
VDS
≥
10 V
TJ = 25
°
C
TJ = –55
°
C
25
°
C
100
°
C
0.06
8
4
0.02
TJ = 25
°
C
4
8
1
2
1
1.5
2
2.5
0.04
0
2
4
8
1
10
0
2.5
5
7.5
15
2.7 V
10
12.5
0
0.02
0.04
6
3
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4
8
6
5
6
4.5 V
VGS = 2.7 V
TJ = 25
°
C
R
TJ, JUNCTION TEMPERATURE (
°
C)
–50
0
50
100
150
0
0.4
0.8
1.2
1.6
VGS = 4.5 V
ID = 2.5 A
125
75
25
–25
VGS = 0 V
TJ = 125
°
C
100
°
C
1.2
10
2.0 V
1.7 V
1.8 V
4.5 V
VGS = 12 V
ID = 5 A
TJ = 25
°
C
1.9 V
0.5
0
2
0.01
0.03
0.05
1000
0.8
2.3 V
1.6 V
1.5 V
5
3
7
0.03
0.05
7
3
5
7
0.06
0.07
0.08
0.2
0.6
1
1.4
0.1
10000
25
°
C
17.5
20
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF6N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS |
| MMDF6N02HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MMDF6N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
| MMDF6N03HDR2 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 6 Amps, 30 Volts |
| MMDF7N02Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS |
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