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參數(shù)資料
| 型號： | MMDF5N02Z |
| 廠商： | Motorola, Inc. |
| 英文描述： | DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS |
| 中文描述： | 偶的TMOS功率MOSFET 5.0安培20伏特 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 186K |
| 代理商： | MMDF5N02Z |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0)
(3)
V(BR)DSS
20
—
—
15
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
—
—
0.5
15
150
μ
Adc
IGSS
—
—
1.5
μ
Adc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0)
(3)
VGS(th)
0.5
—
0.78
3.0
1.1
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 5.0 Adc)
(VGS = 2.7 Vdc, ID = 2.5 Adc)
(Cpk
≥
2.0)
(3)
RDS(on)
—
—
34
44
40
50
m
Forward Transconductance (VDS = 9.0 Vdc, ID = 2.0 Adc)
gFS
3.0
5.6
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
10 Vdc V
Ciss
Coss
Crss
—
450
630
pF
Output Capacitance
—
330
460
Transfer Capacitance
—
160
225
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 6 0 Vd
(DD
VGS = 4.5 Vdc, RG = 6
)
5 0 Ad
td(on)
tr
td(off)
tf
QT
Q1
Q2
—
29
37
ns
Rise Time
—
182
258
Turn–Off Delay Time
,I
,
—
190
238
Fall Time
—
225
274
Gate Charge
(VDS = 10 Vdc,D
(DS
VGS = 4.5 Vdc)
5 0 Ad
—
10.7
12
nC
—
1.1
—
,
—
5.4
—
Q3
—
3.5
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 5.0 Adc, VGS = 0 Vdc)
(IS = 5.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.78
0.65
1.0
—
Vdc
Reverse Recovery Time
(IS = 5 0 Adc V
dIS/dt = 100 A/
μ
s)
0 Vdc
trr
ta
tb
—
195
—
ns
—
72
—
—
123
—
Reverse Recovery Storage Charge
QRR
—
0.5
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
Max limit – Typ
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|---|---|
| MMDF6N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS |
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| MMDF6N03HDR2 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 6 Amps, 30 Volts |
| MMDF7N02Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS |
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