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參數(shù)資料
| 型號： | MMDF4C03HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
| 中文描述： | 5500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-05, SO-8 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 275K |
| 代理商： | MMDF4C03HD |
6
Motorola TMOS Power MOSFET Transistor Device Data
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
V
20
10
30
0
0
6.0
3.0
0
Qg, TOTAL GATE CHARGE (nC)
V
2.0
4.0
6.0
8.0
14
ID = 3 A
TJ = 25
°
C
10
12
VDS
VGS
Q2
Q3
Q1
16
7.0
4.0
5.0
2.0
1.0
QT
RG, GATE RESISTANCE (OHMS)
1.0
10
100
100
10
1.0
t
VDD = 15 V
ID = 3 A
VGS = 10 V
TJ = 25
°
C
tr
tf
td(off)
td(on)
1000
V
20
10
30
0
0
6.0
5.0
3.0
2.0
1.0
0
Qg, TOTAL GATE CHARGE (nC)
V
12
11
9.0
8.0
2.0
4.0
6.0
8.0
14
ID = 5 A
TJ = 25
°
C
10
12
VDS
VGS
QT
Q2
Q3
Q1
16
7.0
4.0
10
RG, GATE RESISTANCE (OHMS)
1.0
10
100
100
10
1.0
t
VDD = 15 V
ID = 6 A
VGS = 10 V
TJ = 25
°
C
tr
tf
td(off)
td(on)
1000
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