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參數(shù)資料
| 型號(hào)： | MMDF4C03HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
| 中文描述： | 5500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-05, SO-8 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 275K |
| 代理商： | MMDF4C03HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 3. On–Resistance versus
Gate–To–Source Voltage
2.9 V
2.7 V
1.2
2.0
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
6.0
4.0
5.0
3.0
I
2.0
1.0
0
0.6
0.2
0.4
0.8
1.0
1.4
1.6
1.8
TJ = 25
°
C
3.1 V
3.3 V
3.5 V
3.7 V
3.9 V
VGS = 10 V
6.0 V
4.1 V
4.5 V
4.3 V
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4.5
5.0
1.5
4.0
2.0
1.0
0
I
D
2.0
2.5
3.0
3.5
4.0
3.0
5.0
6.0
,
VDS
≥
10 V
TJ = –55
°
C
100
°
C
25
°
C
8.0
10
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0.8
0.4
0.3
0.2
0.1
0
9.0
R
3.0
4.0
5.0
6.0
7.0
,
D
0.5
TJ = 25
°
C
ID = 3 A
0.6
0.7
1.2
2.0
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
12
8.0
10
6.0
I
4.0
2.0
0
0.6
0.2
0.4
0.8
1.0
1.4
1.6
1.8
TJ = 25
°
C
2.7 V
2.9 V
3.1 V
3.3 V
3.5 V
VGS = 2.5 V
10 V
6.0 V
4.5 V
4.3 V
4.1 V
3.7 V
3.9 V
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4.5
5.0
1.5
8.0
4.0
2.0
0
I
D
2.0
2.5
3.0
3.5
4.0
6.0
10
12
,
VDS
≥
10 V
TJ = –55
°
C
100
°
C
25
°
C
8.0
10
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0.30
0.20
0.15
0.10
0.05
0
9.0
R
3.0
4.0
5.0
6.0
7.0
,
D
0.25
TJ = 25
°
C
ID = 6 A
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