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參數(shù)資料
| 型號(hào)： | MMDF3N06HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | DUAL TMOS POWER MOSFET 60 VOLTS |
| 中文描述： | 3300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-05, SO-8 |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 213K |
| 代理商： | MMDF3N06HD |
6
Motorola TMOS Power MOSFET Transistor Device Data
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
A
0
25
45
65
85
105
60
ID = 3.0 A
80
145
120
40
20
100
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1.0
10
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 12 V
SINGLE PULSE
TA = 25
°
C
10
0.1
dc
10 ms
1.0
100
100
1.0 ms
125
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 14. Thermal Response
Figure 15. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
t, TIME (s)
R
T
0.1
0.01
D = 0.5
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1.0
10
0.02
0.01
100
1000
0.001
1.0
0.0106
0.0431
0.1643
0.3507
0.4302
177.14 F
2.9468 F
0.5064 F
0.1406 F
0.0253 F
Chip
Junction
Ambient
0.05
0.1
0.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF3N06VL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
| MMDF3NO2HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| MMDF3P03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
| MMDF4C03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
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