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參數(shù)資料
| 型號： | MMDF3N06HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL TMOS POWER MOSFET 60 VOLTS |
| 中文描述： | 3300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-05, SO-8 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 213K |
| 代理商： | MMDF3N06HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
60
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0 Vdc)
(VDS = 48 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
0.001
0.05
1.0
25
μ
Adc
IGSS
—
12
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
VGS(th)
1.0
—
—
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.3 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
RDS(on)
—
—
67.5
82.5
100
200
m
Forward Transconductance
(VDS = 15 Vdc, ID = 1.5 Adc)
gFS
—
7.5
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
—
442
618
pF
Output Capacitance
—
97.6
137
Transfer Capacitance
—
24.4
34.2
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 30 Vdc, ID = 3.3 Adc,
VGS= 4 5 Vdc
VGS = 4.5 Vdc,
RG = 30
3 3 Ad
td(on)
tr
td(off)
tf
td(on)
tr
—
10.6
22.1
ns
Rise Time
—
15.9
31.8
Turn–Off Delay Time
—
23.8
47.6
Fall Time
)
—
14.7
29.4
Turn–On Delay Time
(VDD = 15 Vd
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
I
3 0 Ad
—
7.0
14
ns
Rise Time
—
4.8
9.6
Turn–Off Delay Time
td(off)
tf
QT
Q1
Q2
Q3
—
32.4
64.8
Fall Time
)
—
14.2
28.4
Gate Charge
(See Figure 8)
(VDS = 30 Vdc,D
(DS
VGS = 10 Vdc)
3 3 Ad
—
14.5
29
nC
—
1.8
—
,
—
3.5
—
—
3.75
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.78
0.65
1.2
—
Vdc
Reverse Recovery Time
(IS = 1 7 Adc V
dIS/dt = 100 A/
μ
s)
0 Vdc
trr
ta
—
27.9
—
ns
—
23
—
tb
—
4.9
—
Reverse Recovery Stored Charge
QRR
—
0.038
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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