參數(shù)資料
型號： MMDF2C02ER2
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 3.6 A, 25 V, 0.1 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： MINIATURE, CASE 751-07, SO-8
文件頁數(shù)： 6/10頁
文件大小： 231K
代理商： MMDF2C02ER2
MMDF2C02E
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
NChannel
PChannel
Figure 3. OnResistance versus
GatetoSource Voltage
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation
with Temperature
Figure 3. OnResistance versus
GatetoSource Voltage
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
34
5
10
0.3
0.4
0.6
VGS, GATETOSOURCE VOLTAGE (VOLTS)
0.2
68
0
0.1
9
7
0.5
ID = 1 A
TJ = 25°C
10 V
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0.1
ID, DRAIN CURRENT (AMPS)
0.4
0.5
0.6
0.3
0.2
0
0.5
1
1.5
2
VGS = 4.5
TJ = 25°C
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 2 A
125
75
25
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0.4
0.5
0.6
0.3
0.1
0.2
0
23
4
5
8
67
910
VGS, GATETOSOURCE VOLTAGE (VOLTS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
ID, DRAIN CURRENT (AMPS)
0.15
01
2
5
6
0.05
0.1
34
10 V
VGS = 4.5
TJ = 25°C
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 3.5 A
125
75
25
ID = 3.5 A
TJ = 25°C
7
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDF2C02HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS
MMDF2C02HDR2 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述:
MMDF2C03HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
MMDF2C03HDR2 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMDF2C03HDR2G 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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