參數(shù)資料
型號(hào): MMDF2C02ER2
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 3.6 A, 25 V, 0.1 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: MINIATURE, CASE 751-07, SO-8
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 231K
代理商: MMDF2C02ER2
MMDF2C02E
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS continued (TA = 25°C unless otherwise noted) (Note 6)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS continued (Note 8)
Total Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
QT
(N)
(P)
10.6
10
30
15
nC
GateSource Charge
Q1
(N)
(P)
1.3
1.0
GateDrain Charge
Q2
(N)
(P)
2.9
3.5
Q3
(N)
(P)
2.7
3.0
SOURCEDRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage (Note 7)
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
(N)
(P)
1.0
1.5
1.4
2.0
Vdc
Reverse Recovery Time
see Figure 7
(IF = IS,
dIS/dt = 100 A/ms)
trr
(N)
(P)
34
32
66
64
ns
ta
(N)
(P)
17
19
tb
(N)
(P)
17
12
QRR
(N)
(P)
0.025
0.035
mC
6. Negative signs for PChannel device omitted for clarity.
7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
8. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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