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參數(shù)資料
| 型號： | MMDF2C02ER2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3.6 A, 25 V, 0.1 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIATURE, CASE 751-07, SO-8 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 231K |
| 代理商： | MMDF2C02ER2 |
MMDF2C02E
http://onsemi.com
2
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
V(BR)DSS
25
Vdc
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
IDSS
(N)
(P)
1.0
mAdc
GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th)
1.0
2.0
3.0
Vdc
DraintoSource OnResistance
(VGS = 10 Vdc, ID = 2.2 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
RDS(on)
(N)
(P)
0.100
0.250
Ohm
DraintoSource OnResistance
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
(N)
(P)
0.200
0.400
Ohm
OnState Drain Current
(VDS = 5.0 Vdc, VGS = 4.5 Vdc)
ID(on)
(N)
(P)
2.0
Adc
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
(N)
(P)
1.0
2.6
2.8
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
(N)
(P)
380
340
532
475
pF
Output Capacitance
Coss
(N)
(P)
235
220
329
300
Transfer Capacitance
Crss
(N)
(P)
55
75
110
150
SWITCHING CHARACTERISTICS (Note 5)
TurnOn Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc, RG = 9.1 Ω)
(VDD = 10 Vdc, ID = 1.0 Adc,
VGS = 5.0 Vdc, RG = 25 Ω)
td(on)
(N)
(P)
10
20
30
40
ns
Rise Time
tr
(N)
(P)
35
40
70
80
TurnOff Delay Time
td(off)
(N)
(P)
19
53
38
106
Fall Time
tf
(N)
(P)
25
41
50
82
TurnOn Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 Ω)
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 Ω)
td(on)
(N)
(P)
7.0
13
21
26
Rise Time
tr
(N)
(P)
17
29
30
58
TurnOff Delay Time
td(off)
(N)
(P)
27
30
48
60
Fall Time
tf
(N)
(P)
18
28
30
56
3. Negative signs for PChannel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF2C02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
| MMDF2C03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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