參數(shù)資料
型號(hào)： MMBT5550LT3
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 600 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： CASE 318-08, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 176K
代理商： MMBT5550LT3
High Voltage Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
140
Vdc
Collector–Base Voltage
VCBO
160
Vdc
Emitter–Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
–55 to +150
°C
DEVICE MARKING
MMBT5550LT1 = M1F; MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
MMBT5550
MMBT5551
V(BR)CEO
140
160
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBT5550
MMBT5551
V(BR)CBO
160
180
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
MMBT5550
(VCB = 120 Vdc, IE = 0)
MMBT5551
(VCB = 100 Vdc, IE = 0, TA = 100°C)
MMBT5550
(VCB = 120 Vdc, IE = 0, TA = 100°C)
MMBT5551
ICBO
—
100
50
100
50
nAdc
Adc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
—
50
nAdc
1. FR–5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
635
Publication Order Number:
MMBT5550LT1/D
MMBT5550LT1
MMBT5551LT1
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236)
MMBT5551LT1 is a Preferred Device
COLLECTOR
3
1
BASE
2
EMITTER
相關(guān)PDF資料
PDF描述
MMBT5550 600 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT5551L-C-AE3-R 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT5551G-A-AE3-R 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT5551-A-AE3-R 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT5551G-C-AE3-R 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT5550LT3G 功能描述:兩極晶體管 - BJT SS HV XSTR NPN 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT5550NL 制造商:Fairchild Semiconductor Corporation 功能描述:
MMBT5551 功能描述:兩極晶體管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT5551 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORNPN160V0.6ASOT23 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR,NPN,160V,0.6A,SOT23
MMBT5551 制造商:Fairchild Semiconductor Corporation 功能描述:RF BIPOLAR TRANSISTOR ROHS COMPLIANT:NO
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