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參數(shù)資料
| 型號(hào)： | MMBT3906K |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | High-Voltage, High-Current Operational Amplifier 5-DDPAK/TO-263 |
| 中文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 58K |
| 代理商： | MMBT3906K |
2005 Fairchild Semiconductor Corporation
MMBT3906K Rev. A
1
www.fairchildsemi.com
M
February 2005
MMBT3906K
PNP Epitaxial Silicon Transistor
General Purpose Transistor
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
Symbol
Parameter
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
-40
V
Collector-Emitter Voltage
-40
V
Emitter-Base Voltage
-5
V
Collector Current
-200
mA
Collector Power Dissipation
350
mW
Storage Temperature
150
°
C
Test Condition
Min.
Max.
Units
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Collector-Base Breakdown Voltage
I
C
= -10
μ
A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= -30V, V
EB
= -3V
V
CE
= -1V, I
C
= -0.1mA
V
CE
= -1V, I
C
= -1mA
V
CE
= -1V, I
C
= -10mA
V
CE
= -1V, I
C
= -50mA
V
CE
= -1V, I
C
= -100mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, V
CE
= -20V, f = 100MHz
V
CB
= -5V, I
E
=0, f=1.0MHz
I
C
= -100
μ
A, V
CE
= -5V, R
S
= 1K
f = 10Hz to 15.7KHz
-40
V
Collector-Emitter Breakdown Voltage *
-40
V
Emitter-Base Breakdown Voltage
-5
V
Collector Cut-off Current
-50
nA
DC Current Gain *
60
80
100
60
30
300
V
CE
(sat)
Collector-Emitter Saturation Voltage *
-0.25
-0.4
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage *
-0.65
-0.85
-0.95
V
V
f
T
C
ob
NF
Current Gain Bandwidth Product
250
MHz
Output Capacitance
4.5
pF
Noise Figure
4
dB
t
ON
Turn On Time
V
CC
= -3V, V
BE
= -0.5V
I
C
= -10mA, I
B1
= -1mA
V
CC
= -3V, I
C
= -10mA, I
B1
= I
B2
= -1mA
70
ns
t
OFF
Turn Off Time
300
ns
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
2AK
Marking
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