參數(shù)資料
型號： MMBT4354
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： PNP General Purpose Amplifier
中文描述： 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： SOT-23, 3 PIN
文件頁數(shù)： 1/4頁
文件大小： 47K
代理商： MMBT4354
2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
M
Absolute Maximum Ratings*
T
a
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)CEO
Collector-Emitter Sustaining Voltage *
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
On Characteristics *
h
FE
DC Current Gain
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
1.0%
Parameter
Value
-60
-60
-5.0
-800
- 55 ~ 150
Units
V
V
V
mA
°
C
- Continuous
Test Condition
Min.
Max.
Units
I
C
= -1.0mA, I
B
= 0
I
C
= -10
μ
A, I
E
= 0
I
E
= -10
μ
A, I
C
= 0
V
CB
= -50V, I
E
= 0
V
EB
= -5.0V, V
CE
= 0
-60
-60
-5.0
V
V
V
nA
μ
A
-50
-10
V
CE
= -5V, I
C
= -0.1mA
V
CE
= -5V, I
C
= -1.0mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -100mA
V
CE
= -5V, I
C
= -500mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -0.5V, I
C
= -500mA
25
40
50
40
30
500
V
CE
(sat)
Collector-Emitter Saturation Voltage
-0.15
-0.50
-0.9
-1.1
-1.1
V
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
V
BE
(on)
Small Signal Characteristics
h
fe
Base-Emitter On Voltage
Small Signal Current Gain
I
C
= -50mA, V
CE
= -10V,
f = 100MHz
V
CE
= -10V, I
C
= -100
μ
A
R
S
= 1.0k
, f = 1.0KHz,
B
W
= 1.0Hz
1.0
5.0
NF
Noise Figure
2.0
dB
Switching Characteristics
t
on
t
off
Turn-On Time
Turn-Off Time
I
C
= -500mA, V
CC
= -30V
I
B1
= I
B2
= -50mA
100
400
ns
ns
MMBT4354
PNP General Purpose Amplifier
This device is deisgned for use as general purpose amplifiers and
switch requiring collector currents to 500mA.
Sourced from process 67.
TN4033A for characteristics.
1. Base 2. Emitter 3. Collector
1
2
3
SOT-23
Mark: 79
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT4354_Q 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4355 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4355_Q 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4356 功能描述:兩極晶體管 - BJT PNP/ 30V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4400 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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