參數(shù)資料
型號(hào)： MMBT4401K
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： PNP Epitaxial Silicon Transistor
中文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： SOT-23, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 59K
代理商： MMBT4401K
2005 Fairchild Semiconductor Corporation
MMBT4401K Rev. A
1
www.fairchildsemi.com
M
February 2005
MMBT4401K
PNP Epitaxial Silicon Transistor
Switching Transistor
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
Symbol
Parameter
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
60
V
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
6
V
Collector Current
600
mA
Collector Dissipation
350
mW
Storage Temperature
150
°
C
Test Condition
Min.
Max.
Units
BV
CBO
BV
CEO
BV
EBO
I
BEV
I
CEX
h
FE
Collector-Base Breakdown Voltage
I
C
= 100
μ
A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 35V, V
EB
= 0.4V
V
CE
= 35V, V
EB
= 0.4V
V
CE
= 1V, I
C
= 0.1mA
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 150mA
V
CE
= 2V, I
C
= 500mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 20mA, V
CE
= 10V, f = 100MHz
V
CB
=5V, I
E
=0, f=100KHz
V
CC
= 30V, V
BE
= 2V
I
C
= 150mA, I
B1
= 15mA
V
CC
= 30V, I
C
= 150mA
I
B1
= I
B2
= 15mA
60
V
Collector-Emitter Breakdown Voltage *
40
V
Emitter-Base Breakdown Voltage
6
V
Base Cut-off Current
100
nA
Collector Cut-off Current
100
nA
DC Current Gain *
20
40
80
100
40
300
V
CE
(sat)
Collector-Emitter Saturation Voltage *
0.4
0.75
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage *
0.75
0.95
1.2
V
V
f
T
C
ob
t
ON
Current Gain Bandwidth Product
250
MHz
Output Capacitance
6.5
pF
Turn On Time
35
ns
t
OFF
Turn Off Time
255
ns
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
2XK
Marking
相關(guān)PDF資料
PDF描述
MMBT4401 NPN General Purpose Amplifier(NPN型通用放大器)
MMBT4403 PNP General Purpose Amplifier(PNP型通用放大器)
MMBT5087 PNP General Purpose Amplifier
MMBT5086 PNP (LOW NOISE TRANSISTOR)
MMBT5087 PNP (LOW NOISE TRANSISTOR)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT4401LT 制造商:Motorola 功能描述:4401 MOT N12J6G
MMBT4401LT1 功能描述:兩極晶體管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4401LT1G 功能描述:兩極晶體管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4401LT1G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
MMBT4401LT1H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*