參數(shù)資料
型號： MMBT5087
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： PNP (LOW NOISE TRANSISTOR)
中文描述： 進(jìn)步黨（低噪聲晶體管）
文件頁數(shù)： 1/9頁
文件大小： 100K
代理商： MMBT5087
2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
2
Absolute Maximum Ratings*
T
a
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector current
T
J
, T
stg
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage *
V
(BR)CBO
Collector-Base Breakdown Voltage
I
CEO
Collector Cutoff Current
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Parameter
Value
-50
-50
-3.0
-100
-55 ~ +150
Units
V
V
V
mA
°
C
- Continuous
Test Condition
Min.
Max.
Units
I
C
= -1.0mA, I
B
= 0
I
C
= -100
μ
A, I
E
= 0
V
CB
= -10V, I
E
= 0
V
CB
= -35V, I
E
= 0
V
EB
= -3.0V, I
C
= 0
-50
-50
V
V
nA
nA
nA
-10
-50
-50
I
CBO
On Characteristics
h
FE
Emitter Cutoff Current
DC Current Gain
I
C
= -100
μ
A, V
CE
= -5.0V
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
5086
5087
5086
5087
5086
5087
150
250
150
250
150
250
500
800
V
CE(sat)
V
BE(on)
Small Signal Characteristics
f
T
Current Gain Bandwidth Product
C
cb
Collector-Base Capacitance
h
fe
Small-Signal Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= -10mA, I
B
= -1.0mA
I
C
= -1.0mA, V
CE
= -5.0V
-0.3
-0.85
V
V
I
C
= -500
μ
A, V
CE
= -5.0V, f = 20MHz
V
CB
= -5.0V, I
E
= 0, f = 100KHz
I
C
= -1.0mA, V
CE
= -5.0V,
f = 1.0KHz
I
C
= -100
μ
A, V
CE
= -5.0V
R
S
= 3.0k
, f = 1.0KHz
40
MHz
pF
4.0
600
900
3.0
2.0
5086
5087
5086
5087
150
250
NF
Noise Figure
I
C
= -20
μ
A, V
CE
= -5.0V
R
S
= 10k
f = 10Hz to 15.7KHz
5086
5087
3.0
2.0
dB
dB
dB
dB
2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.
SOT-23
Mark: 2Q
1. Base 2. Emitter 3. Collector
1
2
3
TO-92
1
1. Emitter 2. Base 3. Collector
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參數(shù)描述
MMBT5087_Q 功能描述:兩極晶體管 - BJT SOT-23 PNP GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT5087LT1 功能描述:兩極晶體管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT5087LT1G 功能描述:兩極晶體管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT5087LT1G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
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