參數資料
型號： MMBT5086
廠商： Electronic Theatre Controls, Inc.
英文描述： Mini size of Discrete semiconductor elements
中文描述： 迷你型離散半導體元件
文件頁數： 1/9頁
文件大?。?/td> 100K
代理商： MMBT5086
2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
2
Absolute Maximum Ratings*
T
a
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector current
T
J
, T
stg
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage *
V
(BR)CBO
Collector-Base Breakdown Voltage
I
CEO
Collector Cutoff Current
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Parameter
Value
-50
-50
-3.0
-100
-55 ~ +150
Units
V
V
V
mA
°
C
- Continuous
Test Condition
Min.
Max.
Units
I
C
= -1.0mA, I
B
= 0
I
C
= -100
μ
A, I
E
= 0
V
CB
= -10V, I
E
= 0
V
CB
= -35V, I
E
= 0
V
EB
= -3.0V, I
C
= 0
-50
-50
V
V
nA
nA
nA
-10
-50
-50
I
CBO
On Characteristics
h
FE
Emitter Cutoff Current
DC Current Gain
I
C
= -100
μ
A, V
CE
= -5.0V
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
5086
5087
5086
5087
5086
5087
150
250
150
250
150
250
500
800
V
CE(sat)
V
BE(on)
Small Signal Characteristics
f
T
Current Gain Bandwidth Product
C
cb
Collector-Base Capacitance
h
fe
Small-Signal Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= -10mA, I
B
= -1.0mA
I
C
= -1.0mA, V
CE
= -5.0V
-0.3
-0.85
V
V
I
C
= -500
μ
A, V
CE
= -5.0V, f = 20MHz
V
CB
= -5.0V, I
E
= 0, f = 100KHz
I
C
= -1.0mA, V
CE
= -5.0V,
f = 1.0KHz
I
C
= -100
μ
A, V
CE
= -5.0V
R
S
= 3.0k
, f = 1.0KHz
40
MHz
pF
4.0
600
900
3.0
2.0
5086
5087
5086
5087
150
250
NF
Noise Figure
I
C
= -20
μ
A, V
CE
= -5.0V
R
S
= 10k
f = 10Hz to 15.7KHz
5086
5087
3.0
2.0
dB
dB
dB
dB
2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.
SOT-23
Mark: 2Q
1. Base 2. Emitter 3. Collector
1
2
3
TO-92
1
1. Emitter 2. Base 3. Collector
相關PDF資料
PDF描述
MMBT5087 Mini size of Discrete semiconductor elements
MMBT5087 Low Noise Transistor
MMBT5087LT1 Low Noise Transistor
MMBT5087LT1D Low Noise Transistor
MMBT5087LT3 Low Noise Transistor
相關代理商/技術參數
參數描述
MMBT5087 功能描述:兩極晶體管 - BJT SOT-23 PNP GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT5087_Q 功能描述:兩極晶體管 - BJT SOT-23 PNP GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT5087LT1 功能描述:兩極晶體管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT5087LT1G 功能描述:兩極晶體管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT5087LT1G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*