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參數資料
| 型號： | MMBT3906G-AL3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁數： | 3/3頁 |
| 文件大?。?/td> | 134K |
| 代理商： | MMBT3906G-AL3-R |
MMBT3906
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 3
www.unisonic.com.tw
QW-R206-013.D
TYPICAL CHARACTERISTICS
DC Current Gain
Collector Current, IC(mA)
-3 -5 -10 -30 -50 -100 -300 -1000
30
10
50
100
300
1000
DC
Curr
ent
Gai
n,
h
FE
VCE=-20V
Current Gain-Bandwidth Product
Collector Current, IC(mA)
-1
-0.3 -0.5 -1
-3 -5 -10 -30 -50 -100
-0.1
10
30
50
100
300
500
1000
Curren
tGa
in-Ba
ndwidth
Product,
f
T(MHz)
500
VCE=-1V
VCE=10V
VCE=1V
IE=0
f=100KHz
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Current, IC(mA)
-0.01
-0.03
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
-10
IC=10 IB
Sa
tura
tion
Vol
tage
,V
BE
(S
AT)
,V
CE
(S
AT
)(V)
-100
-50
-30
-10
-5
-3
-1
0
2
4
6
8
10
12
Output Capacitance
Collector-Base Voltage, VCB(V)
Cap
acitance,
C
ob
(p
F)
-0.3 -0.5 -1
-3 -5 -10 -30 -50 -100
-0.1
VBE(SAT)
VCE(SAT)
-30
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT3906GH | 制造商:ZOWIE 制造商全稱:Zowie Technology Corporation 功能描述:General Purpose Transistor PNP Silicon |
| MMBT3906-GS08 | 功能描述:兩極晶體管 - BJT PNP General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906-HF | 功能描述:射頻雙極電源晶體管 Transistor I=-200mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MMBT3906-HF_12 | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:General Purpose Transistor |
| MMBT3906K | 功能描述:兩極晶體管 - BJT PNP EPITAXIAL SILICON RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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