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參數(shù)資料
| 型號(hào)： | MMBT3906G-AL3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 134K |
| 代理商： | MMBT3906G-AL3-R |
MMBT3906
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-013.D
ABSOLUTE MAXIMUM RATING (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
VCBO
-40
V
Collector Emitter Voltage
VCEO
-40
V
Emitter Base Voltage
VEBO
-5
V
Collector Current
IC
-200
mA
Base Current
IB
-50
mA
Collector Dissipation
PC
350
mW
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector Cut-off Current
ICEX
VCE=-30V, VEB=-3V
-50
nA
Base Cut-off Current
IBL
VCE=-30V, VEB=-3V
-50
nA
Collector-Base Breakdown Voltage
VCBO
IC=-10μA,IE=0
-40
V
Collector-Emitter Breakdown Voltage
(Note)
VCEO
IC=-1mA, IB=0
-40
V
Emitter-Base Breakdown Voltage
VEBO
IE=-10μA, IC=0
-6
V
hFE1
VCE=-1V, IC=-0.1mA
60
hFE2
VCE=-1V, IC=-1mA
80
hFE3
VCE=-1V, IC=-10mA
100
300
hFE4
VCE=-1V, IC=-50mA
60
DC Current Gain (Note)
hFE5
VCE=-1V, IC=-100mA
30
VCE(SAT)1 IC=-10mA, IB=-1mA
-0.25
V
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)2IC=-50mA, IB=-5mA
-0.4
V
VBE(SAT)1 IC=-10mA, IB=-1mA
-0.65
-0.85
V
Base-Emitter Saturation Voltage
VBE(SAT)2IC=-50mA, IB=-5mA
-0.95
V
Transition Voltage
fT
VCE=-20V, IC=-10mA, f=100MHz 250
MHz
Output Capacitance
Cob
VCB=-5V,IE=0, f=1MHz
4.5
pF
Turn on Time
tON
VCC=-3V, VBE=-0.5V, IC=-10mA,
IB1=-1mA
70
ns
Turn off Time
tOFF
IB1=1B2=-1mA
300
ns
Note: Pulse test: PW≦300
μs, Duty Cycle≦2%
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