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參數(shù)資料
| 型號： | MMBT3906/E8 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 57K |
| 代理商： | MMBT3906/E8 |
MMBT3906
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88225
2
10-May-02
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
–VCE = 1V, –IC = 0.1mA
60
——
–VCE = 1V, –IC = 1mA
80
——
DC Current Gain
hFE
–VCE = 1V, –IC = 10mA
100
—
300
—
–VCE = 1V, –IC = 50mA
60
——
–VCE = 1V, –IC = 100mA
30
——
Collector-Base Breakdown Voltage
–V(BR)CBO
–IC = 10
A, IE = 0
40
——
V
Collector-Emitter Breakdown Voltage
–V(BR)CEO
–IC = 1mA, IB = 0
40
——
V
Emitter-Base Breakdown Voltage
–V(BR)EBO
–IE = 10
A, IC = 0
5
——
V
Collector Saturation Voltage
–VCEsat
–IC = 10mA, –IB = 1mA
——
0.25
V
–IC = 50mA, –IB = 5mA
——
0.4
Base Saturation Voltage
–VBEsat
–IC = 10mA, –IB = 1mA
——
0.85
V
–IC = 50mA, –IB = 5mA
——
0.95
Collector-Emitter Cut-off Current
–ICEV
–VEB = 3V, –VCE = 30V
——
50
nA
Emitter-Base Cut-off Current
–IEBV
–VEB = 3V, VCE = 30V
——
50
nA
Gain-Bandwidth Product
fT
–VCE = 20V, –IC = 10mA
250
——
MHz
f = 100MHz
Collector-Base Capacitance
CCBO
–VCB = 5V, f = 100kHz
——
4.5
pF
Emitter-Base Capacitance
CEBO
–VCB = 0.5V, f = 100kHz
——
10
pF
Noise Figure
NF
–VCE =5V, –IC = 100
A,
——
4dB
RG =1k
, f = 10...15000Hz
Input Impedance
hie
–VCE = 10V, –IC = 1mA
1
—
10
k
f = 1kHz
Small Signal Current Gain
hfe
–VCE = 10V, –IC = 1mA,
100
—
400
—
f = 1kHz
Voltage Feedback Ratio
hre
–VCE = 10V, –IC = 1mA,
0.5 10-4
—
8 10-4
—
f = 1kHz
Output Admittance
hoe
–VCE = 1V, –IC = 1mA,
1
—
40
S
f = 1kHz
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3906-F | 制造商:DIODES 功能描述:PNP TRANSISTOR (LEAD FREE) |
| MMBT3906FA-7B | 制造商:Diodes Incorporated 功能描述:GENERAL PURPOSE TRANSISTOR X2-DFN0806-3 T&R 10K - Tape and Reel 制造商:Diodes Incorporated 功能描述:TRANS PNP 40V 200MW X2-DFN0806-3 |
| MMBT3906FN3 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:PNP GENERAL PURPOSE SWITCHING TRANSISTOR |
| MMBT3906FW | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT3906FZ-7B | 功能描述:TRANS PNP 40V 0.2A X2-DFN060 制造商:diodes incorporated 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:200mA 電壓 - 集射極擊穿（最大值）:40V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:400mV @ 5mA，50mA 電流 - 集電極截止（最大值）:50nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:- 功率 - 最大值:435mW 頻率 - 躍遷:280MHz 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-XFDFN 供應商器件封裝:X2-DFN0606-3 標準包裝:1 |
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