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參數(shù)資料
| 型號： | MMBT3906/E8 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 57K |
| 代理商： | MMBT3906/E8 |
MMBT3906
Vishay Semiconductors
formerly General Semiconductor
Document Number 88225
www.vishay.com
10-May-02
1
New Product
Small Signal Transistor (PNP)
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
TO-236AB (SOT-23)
Features
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the NPN transistor
MMBT3904 is recommended.
This transistor is also available in the TO-92 case
with the type designation 2N3906.
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Base Voltage
–VCBO
40
V
Collector-Emitter Voltage
–VCEO
40
V
Emitter-Base Voltage
–VEBO
5.0
V
Collector Current
–IC
200
mA
Power Dissipation at TA = 25°CPtot
225(1)
mW
300(2)
Thermal Resistance Junction to Ambient Air
R
θJA
450(1)
°C/W
Thermal Resistance Junction to Substrate Backside
R
θSB
320(1)
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–55 to +150
°C
Notes: (1) Device on fiberglass substrate, see layout.
(2) Device on alumina substrate.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 2A
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Pin Configuration
1 = Base
2 = Emitter
3 = Collector
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBT3906/E9 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT3906 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT3906/E9 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT3906 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT3906-GS18 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3906-F | 制造商:DIODES 功能描述:PNP TRANSISTOR (LEAD FREE) |
| MMBT3906FA-7B | 制造商:Diodes Incorporated 功能描述:GENERAL PURPOSE TRANSISTOR X2-DFN0806-3 T&R 10K - Tape and Reel 制造商:Diodes Incorporated 功能描述:TRANS PNP 40V 200MW X2-DFN0806-3 |
| MMBT3906FN3 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:PNP GENERAL PURPOSE SWITCHING TRANSISTOR |
| MMBT3906FW | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT3906FZ-7B | 功能描述:TRANS PNP 40V 0.2A X2-DFN060 制造商:diodes incorporated 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:200mA 電壓 - 集射極擊穿（最大值）:40V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:400mV @ 5mA，50mA 電流 - 集電極截止（最大值）:50nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:- 功率 - 最大值:435mW 頻率 - 躍遷:280MHz 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-XFDFN 供應(yīng)商器件封裝:X2-DFN0606-3 標(biāo)準(zhǔn)包裝:1 |
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