- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95966 > MMBT3906 (VISHAY SEMICONDUCTORS) 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PDF資料下載
參數(shù)資料
| 型號： | MMBT3906 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 57K |
| 代理商： | MMBT3906 |
MMBT3906
Vishay Semiconductors
formerly General Semiconductor
Document Number 88225
www.vishay.com
10-May-02
1
New Product
Small Signal Transistor (PNP)
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
TO-236AB (SOT-23)
Features
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the NPN transistor
MMBT3904 is recommended.
This transistor is also available in the TO-92 case
with the type designation 2N3906.
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Base Voltage
–VCBO
40
V
Collector-Emitter Voltage
–VCEO
40
V
Emitter-Base Voltage
–VEBO
5.0
V
Collector Current
–IC
200
mA
Power Dissipation at TA = 25°CPtot
225(1)
mW
300(2)
Thermal Resistance Junction to Ambient Air
R
θJA
450(1)
°C/W
Thermal Resistance Junction to Substrate Backside
R
θSB
320(1)
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–55 to +150
°C
Notes: (1) Device on fiberglass substrate, see layout.
(2) Device on alumina substrate.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 2A
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Pin Configuration
1 = Base
2 = Emitter
3 = Collector
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBT3906/E9 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT3906 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT3906-GS18 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT3906-GS08 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT3906FN3T/R7 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3906 MCC | 制造商:MCC 功能描述:General Purpose PNP SM TRANS SOT-23 制造商:MCC 功能描述:General Purpose PNP SM TRANS SOT-23 - free partial T/R at 500. |
| MMBT3906,215 | 功能描述:兩極晶體管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP SOT-23 |
| MMBT3906/E9 | 制造商:Vishay Semiconductors 功能描述:Trans GP BJT PNP 40V 0.2A 3-Pin SOT-23 T/R |
| MMBT3906_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。