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參數(shù)資料
| 型號(hào)： | MMBT3906-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 135K |
| 代理商： | MMBT3906-GS08 |
VISHAY
MMBT3906
Document Number 85144
Rev. 1.2, 19-May-04
Vishay Semiconductors
www.vishay.com
1
3
2
E
B
C
3
1
2
18978
Small Signal Transistor (PNP)
Features
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the NPN transistor
MMBT3904 is recommended.
This transistor is also available in the TO-92 case
with the type designation 2N3906.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Device on fiberglass substrate, see layout.
2) Device on alumina substrate.
Maximum Thermal Resistance
1) Device on fiberglass substrate, see layout.
Part
Type differentiation
Ordering code
Marking
Remarks
MMBT3906
hFE, 100 to 300 @ 10 mA
MMBT3906-GS18 or MMBT3906-GS08
2A
Tape and Reel
Parameter
Test condition
Symbol
Value
Unit
Collector - base voltage
- VCBO
40
V
Collector - emitter voltage
- VCEO
40
V
Emitter - base voltage
- VEBO
5V
Collector current
- IC
200
mA
Power dissipation
TA = 25 °C
Ptot
2251)
mW
Ptot
3002)
mW
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
RthJA
4501)
°C/W
Thermal resistance junction to
substrate backside
RthSB
3201)
°/W
Junction temperature
Tj
150
°C
Storage temperature range
TS
- 55 to + 150
°C
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| MMBT3906-HF | 功能描述:射頻雙極電源晶體管 Transistor I=-200mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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| MMBT3906K | 功能描述:兩極晶體管 - BJT PNP EPITAXIAL SILICON RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor(NPN Silicon) |
| MMBT3906L-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:GENERAL PURPOSE APPLIATION |
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