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參數(shù)資料
| 型號： | MMBT3906-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 135K |
| 代理商： | MMBT3906-GS08 |
www.vishay.com
2
Document Number 85144
Rev. 1.2, 19-May-04
VISHAY
MMBT3906
Vishay Semiconductors
Electrical DC Characteristics
Electrical AC Characteristics
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
DC current gain
- VCE = 1 V, - IC = 0.1 mA
hFE
60
- VCE = 1 V, - IC = 1 mA
hFE
80
- VCE = 1 V, - IC = 10 mA
hFE
100
300
- VCE = 1 V, - IC = 50 mA
hFE
60
- VCE = 1 V, - IC = 100 mA
hFE
30
Collector - emitter breakdown
voltage
- IC = 1 mA, IB = 0
- V(BR)CEO
40
V
Emitter - base breakdown
voltage
- IE = 10 A, IC = 0
- V(BR)EBO
5V
Collector saturation voltage
- IC = 10 mA, - IB = 1 mA
- VCEsat
0.25
V
- IC = 50 mA, - IB = 5 mA
- VCEsat
0.4
V
Base saturation voltage
- IC = 10 mA, - IB = 1 mA
- VBEsat
0.85
V
- IC = 50 mA, - IB = 5 mA
- VBEsat
0.95
V
Collector - emitter cut - off
current
- VEB = 3 V, - VCE = 30 V
- ICEV
50
nA
Emitter-base cut-off current
- VEB = 3 V, VCE = 30 V
IEBV
50
nA
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
Gain - bandwidth product
- VCE = 20 V, - IC = 10 mA,
f = 100 MHz
fT
250
MHz
Collector - base capacitance
- VCB = 5 V, f = 100 KHz,
CCBO
4.5
pF
Emitter - base capacitance
- VCB = 0.5 V, f = 100 kHz
CEBO
10
pF
Noise figure
- VCE = 5 V, - IC = 100 A,
RG = 1 k, f = 10 to 15000 Hz
NF
4
dB
Input impedance
- VCE = 10 V, - IC = 1 mA,
f = 1 kHz
hie
110
k
Small signal current gain
- VCE = 10 V, - IC = 1 mA,
f = 1 kHz
hfe
100
400
Voltage feedback ratio
- VCE = 10 V, - IC = 1 mA,
f = 1 kHz
hre
0.5 x 10-4
8 x10-4
Output admittance
- VCE = 10 V, - IC = 1 mA,
f = 1 kHz
hoe
140
S
Delay time (see fig. 1)
- IB1 = 1 mA, - IC = 10 mA
td
35
ns
Rise time (see fig. 1)
- IB1 = 1 mA, - IC = 10 mA
tr
35
ns
Storage time (see fig. 2)
IB1 = - IB2 = 1 mA, -IC = 10 mA
ts
225
ns
Fall time (see fig. 2)
IB1 = - IB2 = 1 mA, -IC = 10 mA
tf
75
ns
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| MMBT3906-HF | 功能描述:射頻雙極電源晶體管 Transistor I=-200mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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| MMBT3906K | 功能描述:兩極晶體管 - BJT PNP EPITAXIAL SILICON RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor(NPN Silicon) |
| MMBT3906L-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:GENERAL PURPOSE APPLIATION |
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