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參數(shù)資料
| 型號： | MMBT3906-13 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 340K |
| 代理商： | MMBT3906-13 |
DS30059 Rev. 11 - 2
3 of 3
MMBT3906
www.diodes.com
0
50
100
25
50
75
100
125
150
175
200
P
,
P
O
W
E
R
D
IS
S
IP
A
T
IO
N
(m
W
)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Temperature
150
200
250
300
350
0
1
100
10
0.1
1
10
100
C
,
IN
P
U
T
C
A
P
A
C
IT
A
N
C
E
(p
F
)
IB
O
C
,
O
U
T
P
U
T
C
A
P
A
C
IT
A
N
C
E
(p
F
)
O
B
O
V
, COLLECTOR-BASE VOLTAGE (V)
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
f = 1MHz
Cibo
Cobo
1
10
1000
100
0.1
1
10
1000
100
h
,
D
C
U
R
E
N
T
G
A
IN
F
E
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical DC Current Gain vs
Collector Current
T = -25°C
A
T = +25°C
A
T = 125°C
A
V
= 1.0V
CE
0.01
0.1
10
1
10
100
1000
V
,
C
O
L
E
C
T
O
R
-E
M
IT
T
E
R
(V
)
C
E
(S
A
T
)
S
A
T
U
R
A
T
IO
N
V
O
L
T
A
G
E
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
I
C
I
B
= 10
0.1
1
10
0.1
1
10
100
1000
V
,
B
A
S
E
-E
M
IT
T
E
R
(V
)
B
E
(S
A
T
)
S
A
T
U
R
A
T
IO
N
V
O
L
T
A
G
E
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
I
C
I
B
= 10
T = 25°C
A
T = 75°C
A
T = -25°C
A
T = 125°C
A
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| MMBT3906/E8 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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| MMBT3906 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3906-13-F | 制造商:Diodes Incorporated 功能描述:GENERAL PURPOSE TRANSISTOR SOT23 T&R 10K - Tape and Reel |
| MMBT3906215 | 制造商:NXP Semiconductors 功能描述:SWITCHING TRANSISTOR PNP -40 制造商:NXP Semiconductors 功能描述:TRANS PNP 40V 0.2A SOT23 |
| MMBT39067 | 制造商:Diodes Incorporated 功能描述: 制造商:Vishay Intertechnologies 功能描述: |
| MMBT3906-7 | 功能描述:兩極晶體管 - BJT 60V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906-7-05-F | 制造商:DIODES 功能描述:300mW PNP Transistors / SOT-23 ( |
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