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參數(shù)資料
| 型號(hào)： | MMBT3906-13 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 340K |
| 代理商： | MMBT3906-13 |
DS30059 Rev. 11 - 2
2 of 3
MMBT3906
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
-40
V
IC = -10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
V
IE = -10mA, IC = 0
Collector Cutoff Current
ICEX
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
ICBO
-50
nA
VCB = -30V, IE = 0
Base Cutoff Current
IBL
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
60
80
100
60
30
300
IC = -100A, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.65
-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
2.0
12
kW
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
hre
0.1
10
x 10-4
Small Signal Current Gain
hfe
100
400
Output Admittance
hoe
3.0
60
m
S
Current Gain-Bandwidth Product
fT
250
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
4.0
dB
VCE = -5.0V, IC = -100mA,
RS = 1.0kW, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
35
ns
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
Rise Time
tr
35
ns
Storage Time
ts
225
ns
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Fall Time
tf
75
ns
Notes:
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT3906-7-F.
K3N
Y
M
K3N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Marking Information
Ordering Information
Device
Packaging
Shipping
MMBT3906 -7
SOT-23
3000/Tape & Reel
Date Code Key
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
(Note 4)
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBT3906/E8 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT3906/E9 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT3906 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT3906/E9 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT3906 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3906-13-F | 制造商:Diodes Incorporated 功能描述:GENERAL PURPOSE TRANSISTOR SOT23 T&R 10K - Tape and Reel |
| MMBT3906215 | 制造商:NXP Semiconductors 功能描述:SWITCHING TRANSISTOR PNP -40 制造商:NXP Semiconductors 功能描述:TRANS PNP 40V 0.2A SOT23 |
| MMBT39067 | 制造商:Diodes Incorporated 功能描述: 制造商:Vishay Intertechnologies 功能描述: |
| MMBT3906-7 | 功能描述:兩極晶體管 - BJT 60V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906-7-05-F | 制造商:DIODES 功能描述:300mW PNP Transistors / SOT-23 ( |
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