參數(shù)資料
型號： MMBT2907AT-13
廠商： DIODES INC
元件分類： 小信號晶體管
英文描述： 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數(shù)： 2/4頁
文件大?。?/td> 66K
代理商： MMBT2907AT-13
DS30269 Rev. 3 - 2
2 of 4
MMBT2907AT
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
-60
V
IC = -10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-60
V
IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
V
IE = -10
mA, IC = 0
Collector Cutoff Current
ICBO
-10
nA
mA
VCB = -50V, IE = 0
VCB = -50V, IE = 0, TA = 125
°C
Collector Cutoff Current
ICEX
-50
nA
VCE = -30V, VEB(OFF) = -0.5V
Base Cutoff Current
IBL
-50
nA
VCE = -30V, VEB(OFF) = -0.5V
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
75
100
50
300
IC = -100A, VCE = -10V
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -150mA, VCE = -10V
IC = -500mA, VCE = -10V
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.4
-1.6
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage
VBE(SAT)
-1.3
-2.6
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8.0
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—30
pF
VEB = -2.0V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
200
MHz
VCE = -20V, IC = -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time
toff
45
ns
Delay Time
td
10
ns
VCC = -30V, IC = -150mA,
IB1 = -15mA
Rise Time
tr
40
ns
Turn-Off Time
toff
100
ns
Storage Time
ts
80
ns
VCC = -6.0V, IC = -150mA,
IB1 = IB2 = -15mA
Fall Time
tf
30
ns
Notes:
2.
Short duration test pulse used to minimize self-heating effect.
3.
For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4.
For lead free terminal plating part number, please add "-F" suffix to part number above. Example: MMBT2907AT-7-F.
Device
Packaging
Shipping
MMBT2907AT-7
SOT-523
3000/Tape & Reel
(Note 3 & 4)
Ordering Information
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Year
1998
1999
2000
2001
2002
2003
2004
Code
JK
L
M
N
PR
Date Code Key
2F = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2FYM
Marking Information
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相關代理商/技術參數(shù)
參數(shù)描述
MMBT2907AT-7 功能描述:兩極晶體管 - BJT -60V 150mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2907AT-7-F 功能描述:兩極晶體管 - BJT -60V 150mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2907A-TP 功能描述:兩極晶體管 - BJT 350mW, 600mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2907AT-TP 功能描述:TRANS SS PNP 60V 600MA SOT-523 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
MMBT2907AW 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:PNP General Purpose Transistors
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