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參數(shù)資料
| 型號： | MMBT2907AW |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 153K |
| 代理商： | MMBT2907AW |
PAGE . 1
STAD-JUL.13.2006
MMBT2907AW
VOLTAGE
POWER
60 Volts
225 mW
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
PNP epitaxial silicon, planar design
Collector-emitter voltage VCE = -60V
Collector current IC = -600mA
In compliance with EU RoHS 2002/95/EC directives and with Halogen
Free
ABSOLUTE MAXIMUM RATINGS
Case: SOT-323
Terminals : Solderable per MIL-STD-750,Method 2026
Approx Weight: 0.0048 gram
Device Marking : M7A
MECHANICAL DATA
FEATURES
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Note 1 : Transistor mouted on FR-5 board 1.0 x 0.75 x 0.062 in.
.087(2.2)
.054(1.35)
.056(1.40)
.006(.15)
.016(.40)
.087(2.2)
.044(1.1)
.004(.10)MIN.
.070(1.8)
.045(1.15)
.047(1.20)
.004(.10)MAX.
.002(.05)
.0
08(.20)
.078(2.0)
.035(0.9)
SOT-323
Unit: inch (mm)
Approve Sheet
Part Number:: MMBT2907AW
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2907AWT1 | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2907AWT1G | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2907AWT1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR PNP -60V |
| MMBT2907FW | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT2907-G | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS |
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