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參數(shù)資料
| 型號(hào)： | MMBT2222AT/R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 127K |
| 代理商： | MMBT2222AT/R |
2004 Jan 16
3
NXP Semiconductors
Product data sheet
NPN switching transistor
MMBT2222A
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1.
Pulse test: tp ≤ 300 s; δ ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 60 V
10
nA
IE = 0; VCB = 60 V; Tj = 125 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
10
nA
hFE
DC current gain
IC = 0.1 mA; VCE = 10 V
35
IC = 1 mA; VCE = 10 V
50
IC = 10 mA; VCE = 10 V
75
IC = 10 mA; VCE = 10 V;
Tamb = 55 °C
35
IC = 150 mA; VCE = 10 V
100
300
IC = 150 mA; VCE = 1 V
50
IC = 500 mA; VCE = 10 V
40
VCEsat
collector-emitter saturation voltage
300
mV
1
V
VBEsat
base-emitter saturation voltage
1.2
V
2
V
Cc
collector capacitance
IE = ie = 0; VCB = 10 V;
f = 1 MHz
8
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 500 mV;
f = 1 MHz
25
pF
fT
transition frequency
IC = 20 mA; VCE = 20 V;
f = 100 MHz
300
MHz
F
noise figure
IC = 100 A; VCE = 5 V;
RS = 1 k; f = 1 kHz
4
dB
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
ICon = 150 mA; IBon = 15 mA;
IBoff = 15 mA
35
ns
td
delay time
15
ns
tr
rise time
20
ns
toff
turn-off time
250
ns
ts
storage time
200
ns
tf
fall time
60
ns
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