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參數(shù)資料
| 型號： | MMBD717SW |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.2 A, SILICON, SIGNAL DIODE |
| 封裝： | MINIATURE, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 131K |
| 代理商： | MMBD717SW |
PAGE . 1
STAD-FEB.15.2005
COMMON ANODE SCHOTTKY BARRIER DIODES
VOLTAGE
20 Volts
CURRENT
0.2 Amperes
.087(2.2)
.054(1.35)
.056(1.40)
.006(.15)
.016(.40)
.087(2.2)
.044(1.1)
.004(.10)MIN.
.070(1.8)
.045(1.15)
.047(1.20)
.004(.10)MAX.
.002(.05)
.078(.20)
.078(2.0)
.035(0.9)
SOT-323
Unit: inch (mm)
DATA SHEET
MMBD717W/AW/CW/SW
FEATURES
Th ese Schottky barrier diodes are designed for high speed switching
applicatons, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss.
Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
MECHANICAL DATA
Case: SOT-323, Plastic
Terminals: Solderable per MIL-STD-202G, Method 208
Approx. Weight: 4.8mg
Pb free: 99% Sn above can meet Rohs environment substance
directive request
MAXIMUM RATINGS (TJ = 125
OC unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Reverse Voltage
VR
20
Volts
Forward Power Dissipation @ TA = 25
OC
Derate above 25
OC
PF
200
1.6
mW
mW/
OC
Operating Junction Temperature Range
TJ
-50 to 150
OC
Storage Temperature Range
TSTG
-50 to 150
OC
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
TYPE
MMBD717W
MMBD717AW
MMBD717CW
MMBD717SW
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Reverse Breakdown Voltage (IR=10u A)
V(BR)R
70
-
V
Total Capacitance (VR=1.0V,f=1.0MHz)
CT
-
0.2
uA
Reverse Leakage (V R=10V)
(For each individual diode while the second
diode is unbiased)
IR
-
0.5
1.0
V
Forward Voltage (IF=1.0 m Adc)
VF
-
1.0
Pf
Circuit Figure
SINGLE
COMMONANODE
COMMONCATHODE
SERIES
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBD717CW | 0.2 A, SILICON, SIGNAL DIODE |
| MMBD770W | 0.25 A, 70 V, SILICON, SIGNAL DIODE |
| MMBD914D87Z | 0.2 A, 100 V, SILICON, SIGNAL DIODE |
| MMBD914L99Z | 0.2 A, 100 V, SILICON, SIGNAL DIODE |
| MMBD914TST/R7 | 0.2 A, 100 V, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD717SW-T1 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| MMBD717-T1 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| MMBD717W | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:COMMON ANODE SCHOTTKY BARRIER DIODES |
| MMBD717W_09 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES |
| MMBD717WS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Voltage Range 20 Volts Current 200 mA |
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