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參數(shù)資料
| 型號(hào)： | MMBD914D87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.2 A, 100 V, SILICON, SIGNAL DIODE |
| 封裝： | SOT-23, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | MMBD914D87Z |
MMBD914
MMBD914, Rev. C
Small Signal Diode
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
MMBD914
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
P
D
Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
100
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
T
stg
Storage Temperature Range
-55 to +150
°C
T
J
Operating Junction Temperature
150
°C
1
2
3
5D
3
1
2
SOT-23
Connection Diagram
3
1
2NC
Symbol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
I
R = 5.0 A
I
R = 100 A
75
100
V
F
Forward Voltage
I
F = 10 mA
1.0
V
I
R
Reverse Current
V
R = 20 V
V
R = 20 V, TA = 150°C
VR = 75 V
25
50
5.0
nA
A
C
T
Total Capacitance
V
R = 0, f = 1.0 MHz
4.0
pF
trr
Reverse Recovery Time
I
F = 10 mA, VR = 6.0V,
I
RR = 1.0 mA, RL = 100
4.0
ns
VFR
Peak Forward Recovery Voltage
I
F
= 50 mA PEAK SQUARE
WAVE PULSE WIDTH = 0.1
S
5 kHz – 100 kHz REP RATE
2.5
V
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