- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄62585 > MMBD914L99Z (FAIRCHILD SEMICONDUCTOR CORP) 0.2 A, 100 V, SILICON, SIGNAL DIODE PDF資料下載
參數(shù)資料
| 型號： | MMBD914L99Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.2 A, 100 V, SILICON, SIGNAL DIODE |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 29K |
| 代理商： | MMBD914L99Z |
MMBD914
MMBD914, Rev. C
Small Signal Diode
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
MMBD914
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
P
D
Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
100
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
T
stg
Storage Temperature Range
-55 to +150
°C
T
J
Operating Junction Temperature
150
°C
1
2
3
5D
3
1
2
SOT-23
Connection Diagram
3
1
2NC
Symbol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
I
R = 5.0 A
I
R = 100 A
75
100
V
F
Forward Voltage
I
F = 10 mA
1.0
V
I
R
Reverse Current
V
R = 20 V
V
R = 20 V, TA = 150°C
VR = 75 V
25
50
5.0
nA
A
C
T
Total Capacitance
V
R = 0, f = 1.0 MHz
4.0
pF
trr
Reverse Recovery Time
I
F = 10 mA, VR = 6.0V,
I
RR = 1.0 mA, RL = 100
4.0
ns
VFR
Peak Forward Recovery Voltage
I
F
= 50 mA PEAK SQUARE
WAVE PULSE WIDTH = 0.1
S
5 kHz – 100 kHz REP RATE
2.5
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBD914TST/R7 | 0.2 A, 100 V, SILICON, SIGNAL DIODE |
| MMBD914 | 0.2 A, SILICON, SIGNAL DIODE |
| MMBV109L | VHF BAND, 29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB |
| MMBV3401LT1 | 35 V, SILICON, PIN DIODE, TO-236AB |
| MMBV3700L | 200 V, SILICON, PIN DIODE, TO-236AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD914LT1 | 功能描述:二極管 - 通用，功率，開關(guān) 100V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMBD914LT1G | 功能描述:二極管 - 通用，功率，開關(guān) 100V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMBD914LT1G | 制造商:ON Semiconductor 功能描述:Small Signal Diode |
| MMBD914LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Speed Switching Diode |
| MMBD914LT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。