參數(shù)資料
型號(hào): MMBD717CW
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 0.2 A, SILICON, SIGNAL DIODE
封裝: MINIATURE, PLASTIC PACKAGE-3
文件頁數(shù): 1/3頁
文件大?。?/td> 131K
代理商: MMBD717CW
PAGE . 1
STAD-FEB.15.2005
COMMON ANODE SCHOTTKY BARRIER DIODES
VOLTAGE
20 Volts
CURRENT
0.2 Amperes
.087(2.2)
.054(1.35)
.056(1.40)
.006(.15)
.016(.40)
.087(2.2)
.044(1.1)
.004(.10)MIN.
.070(1.8)
.045(1.15)
.047(1.20)
.004(.10)MAX.
.002(.05)
.078(.20)
.078(2.0)
.035(0.9)
SOT-323
Unit: inch (mm)
DATA SHEET
MMBD717W/AW/CW/SW
FEATURES
Th ese Schottky barrier diodes are designed for high speed switching
applicatons, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss.
Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
MECHANICAL DATA
Case: SOT-323, Plastic
Terminals: Solderable per MIL-STD-202G, Method 208
Approx. Weight: 4.8mg
Pb free: 99% Sn above can meet Rohs environment substance
directive request
MAXIMUM RATINGS (TJ = 125
OC unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Reverse Voltage
VR
20
Volts
Forward Power Dissipation @ TA = 25
OC
Derate above 25
OC
PF
200
1.6
mW
mW/
OC
Operating Junction Temperature Range
TJ
-50 to 150
OC
Storage Temperature Range
TSTG
-50 to 150
OC
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
TYPE
MMBD717W
MMBD717AW
MMBD717CW
MMBD717SW
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Reverse Breakdown Voltage (IR=10u A)
V(BR)R
70
-
V
Total Capacitance (VR=1.0V,f=1.0MHz)
CT
-
0.2
uA
Reverse Leakage (V R=10V)
(For each individual diode while the second
diode is unbiased)
IR
-
0.5
1.0
V
Forward Voltage (IF=1.0 m Adc)
VF
-
1.0
Pf
Circuit Figure
SINGLE
COMMONANODE
COMMONCATHODE
SERIES
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