參數(shù)資料
型號(hào)： MM908E425AIDWB
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： Integrated Quad Half H-Bridge with Power Supply, Embedded MCU, and LIN Serial Communication
中文描述： 綜合四半僅符合電源橋，嵌入式微控制器和LIN串行通信
文件頁(yè)數(shù)： 30/49頁(yè)
文件大?。?/td> 490K
代理商： MM908E425AIDWB
Analog Integrated Circuit Device Data
Freescale Semiconductor
30
908E425
FUNCTIONAL DEVICE OPERATION
LOGIC COMMANDS AND REGISTERS
1 = Hall-effect sensor input pin current above threshold
0 = Hall-effect sensor input pin current below threshold
HALF-BRIDGES
Outputs HB1 : HB4 provide four low-resistive half-bridge
output stages. The half-bridges can be used in H-Bridge,
high-side, or low-side configurations.
Reset clears all bits in the H-Bridge Output Register
(HBOUT) owing to the fact that all half-bridge outputs are
switched off.
HB1: HB4 output features:
Short circuit (overcurrent) protection on high-side and
low-side MOSFETs
Current recopy feature (low side MOSFET)
Overtemperature protection
Overvoltage and undervoltage protection
Current limitation feature (low side MOSFET)
Figure 17. Half-Bridge Push-Pull Output Driver
HALF-BRIDGE CONTROL
Each output MOSFET can be controlled individually. The
general enable of the circuitry is done by setting PSON in the
System Control Register (SYSCTL). HBx_L and HBx_H form
one half-bridge. It is not possible to switch on both MOSFETs
in one half-bridge at the same time. If both bits are set, the
high-side MOSFET has a higher priority.
To avoid both MOSFETs (high side and low side) of one
half-bridge being on at the same time, a break-before-make
circuit exists.
Switching the high-side MOSFET on is inhibited
as long as the potential between gate and V
SS
is not below a
certain threshold. Switching the low-side MOSFET on is
blocked as long as the potential between gate and source of
the high-side MOSFET did not fall below a certain threshold.
HALF-BRIDGE OUTPUT REGISTER (HBOUT)
LOW-SIDE ON OFF BITS (HBX_L )
These read write bits turn on the low-side MOSFETs.
Reset clears the HBx_L bits.
1 = Low-side MOSFET turned on for half-bridge
output x
High-Side Driver
Charge Pump,
Overtemperature Protection,
Overcurrent Protection
Low-Side Driver
Current Recopy,
Current Limitation,
Overcurrent Protection
Control
On/Off
Status
On/Off
Status
Current
Limit
HBx
VSUP
GND
BEMF
Register Name and Address: HBOUT - $01
Bits
7
6
5
4
3
2
1
0
Read
HB4
_
H
HB4
_
L
HB3
_
H
HB3
_
L
HB2
_
H
HB2
_
L
HB1
_
H
HB1
_
L
Write
Reset
0
0
0
0
0
0
0
0
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MM908E621 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror
MM908E621_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Quad Half-bridge and Triple High Side with Embedded MCU and LIN for High End Mirror
MM908E621ACDWB 功能描述:8位微控制器 -MCU QUAD H-B/3-HS W/MCU & LI RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
MM908E621ACDWB/R2 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Quad Half-bridge and Triple High Side with Embedded MCU and LIN for High End Mirror
MM908E621ACDWBR2 功能描述:8位微控制器 -MCU QUAD HB / TRIPLE HS 841B RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
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