參數(shù)資料
型號: MJW16206
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: POWER TRANSISTORS 12 AMPERES 1200 VOLTS - VCES 50 and 150 WATTS
中文描述: 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE
文件頁數(shù): 5/10頁
文件大小: 342K
代理商: MJW16206
5
Motorola Bipolar Power Transistor Device Data
H.P. 214
OR EQUIV.
P.G.
0
–35 V
50
500
1
μ
F
100
–V
2N5337
2N6191
+V
11 V
100
0.02
μ
F
20
10
μ
F
0.02
μ
F
+
RB1
RB2
A
A
50
T1
+V
0 V
–V
*IB
*IC
T.U.T.
L
MR856
Vclamp
VCC
IC
VCE
IB
IB1
IB2
IC(pk)
VCE(pk)
T1
Lcoil(ICpk)
VCC
Note: Adjust –V to obtain desired VBE(off) at Point A.
T1 adjusted to obtain IC(pk)
V(BR)CEO
L = 10 mH
RB2 =
VCC = 20 Volts
RBSOA
L = 200
μ
H
RB2 = 0
VCC = 20 Volts
RB1 selected for desired IB1
*Tektronix P–6042 or Equivalent
Figure 10. RBSOA/V(BR)CEO(sus) Test Circuit
+
t, TIME (ms)
0.01
1
10
0.1
1
0.2
0.1
0.05
r
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 0.67
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
R
Figure 11. Thermal Response
0.5
D = 0.5
100
1K
10K
0.2
0.1
Figure 12. Switching Safe Operating Area
+15
1
μ
F
100
150
+10
50
500
μ
F
VOff
150
MJE210
MUR105
MTP8P10
MPF930
MPF930
100
μ
F
10
μ
F
MUR8100
VCE (1000 V MAX)
10 mH
T.U.T.
RB2
RB1
MUR1100
MUR105
MTP12N10
MTP8P10
Note: Test Circuit for Ultrafast FBSOA
Note:
RB2 = 0 and VOff = –5 Volts
1
μ
F
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