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參數(shù)資料
| 型號： | MJW16206 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS 12 AMPERES 1200 VOLTS - VCES 50 and 150 WATTS |
| 中文描述： | 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 342K |
| 代理商： | MJW16206 |
1
Motorola Bipolar Power Transistor Device Data
NPN Bipolar Power Deflection Transistors
For High and Very High Resolution CRT Monitors
The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar
power transistors. They are specifically designed for use in horizontal deflection
circuits for high and very high resolution, monochrome and color CRT monitors.
1200 Volt VCES Breakdown Capability
Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
Maximum Repetitive Emitter–Base Avalanche Energy Specified (Industry First)
High Current Capability: Performance Specified at 6.5 Amps
Continuous Rating — 12 Amps Max
Pulsed Rating — 15 Amps Max
Isolated MJF16206 is UL Recognized
Fast Switching: 100 ns Inductive Fall Time (Typ)
1000 ns Inductive Storage Time (Typ)
Low Saturation Voltage
0.25 Volts (Typ) at 6.5 Amps Collector Current
High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —
MAXIMUM RATINGS
Rating
Collector–Emitter Breakdown Voltage
Collector–Emitter Sustaining Voltage
Symbol
VCES
VCEO(sus)
VEBO
VISOL
Value
1200
500
Unit
Vdc
Vdc
Emitter–Base Voltage
8.0
Vdc
Isolation Voltage
Vrms
Collector Current
— Pulsed (1)
ICM
15
Base Current — Continuous
IB
5.0
Adc
Derated above 25 C
1.49
Operating and Storage Temperature
–55 to +150
W/ C
C
from the Case for 5 seconds
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
10%.
SCANSWITCH is a trademark of Motorola Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJW16206/D
POWER TRANSISTORS
12 AMPERES
1200 VOLTS — VCES
50 and 150 WATTS
CASE 340F–02
TO–247AE
REV 2
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| MJW21191 | 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJW16212 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJW18020 | 功能描述:兩極晶體管 - BJT 20A 450V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW18020_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Power Transistors High Voltage Planar |
| MJW18020G | 功能描述:兩極晶體管 - BJT 20A 450V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW21191 | 功能描述:兩極晶體管 - BJT 8A 150V 100W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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