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參數(shù)資料
| 型號(hào)： | MJW16212 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR 10 AMPERES 1500 VOLTS - VCES 50 AND 150 WATTS |
| 中文描述： | 10 A, 650 V, NPN, Si, POWER TRANSISTOR, TO-247AE |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 291K |
| 代理商： | MJW16212 |
3–1
Motorola Bipolar Power Transistor Device Data
NPN Bipolar Power Deflection Transistor
For High and Very High Resolution Monitors
The MJW16212 is a state–of–the–art SWITCHMODE
bipolar power transistor. It
is specifically designed for use in horizontal deflection circuits for 20 mm diameter
neck, high and very high resolution, full page, monochrome monitors.
1500 Volt Collector–Emitter Breakdown Capability
Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
Application Specific State–of–the–Art Die Design
Fast Switching:
200 ns Inductive Fall Time (Typ)
2000 ns Inductive Storage Time (Typ)
Low Saturation Voltage:
0.15 Volts at 5.5 Amps Collector Current and 2.5 A Base Drive
Low Collector–Emitter Leakage Current — 250
μ
A Max at 1500 Volts — VCES
High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —
Rel. Humidity < 30%)
Collector Current — Continuous
Per Fig. 15
IC
—
10
Adc
Avalanche Energy
150
Watts
(2) Proper strike and creepage distance must be provided.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SCANSWITCH and SWITCHMODE are trademarks of Motorola Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJW16212/D
POWER TRANSISTOR
10 AMPERES
1500 VOLTS – VCES
50 AND 150 WATTS
*Motorola Preferred Device
CASE 340F–03
TO–247AE
REV 1
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| MJW16212 | POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJW18020 | 功能描述:兩極晶體管 - BJT 20A 450V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW18020_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Power Transistors High Voltage Planar |
| MJW18020G | 功能描述:兩極晶體管 - BJT 20A 450V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW21191 | 功能描述:兩極晶體管 - BJT 8A 150V 100W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW21191G | 功能描述:兩極晶體管 - BJT 8A 150V 100W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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