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參數(shù)資料
| 型號(hào)： | MJE5850 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS |
| 中文描述： | 8 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 302K |
| 代理商： | MJE5850 |
4
Motorola Bipolar Power Transistor Device Data
1
INPUT
Rcoil
Lcoil
VCC
Vclamp
RS =
0.1
1N4937
OR
EQUIVALENT
TUT
SEE ABOVE FOR
DETAILED CONDITIONS
20
1
0
PW Varied to Attain
IC = 100 mA
2
–10 V
t1
ICM
tf Clamped
t
tf
t
Vclamp
t2
TIME
VCEM
1
2
TUT
RL
VCC
t1 Adjusted to
Obtain IC
Test Equipment
Scope — Tektronix
475 or Equivalent
t1
≈
Lcoil (ICM)
VCC
t2
≈
Lcoil (ICM)
VClamp
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
I
C
C
V
T
–V adjusted to obtain desired IB1
+V adjusted to obtain desired VBE(off)
+ V
50
2 W
INPUT
0
0.2
μ
F
0.0025
μ
F
0.1
μ
F
500
1/2 W
500
0.0033
μ
F
500
1/2 W
+ V
50
μ
F
0.1
μ
F
MJE15029
1
2
1
2 W
MJE15028
50
μ
F
+
– V
–
1/2 W
1N4934
0.1
μ
F
–
+
500
1/2 W
0.2
μ
F
IB1 adjusted to
hFE desired
TURN–OFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
IB1
1
2
TURN–ON TIME
Lcoil = 80 mH, VCC = 10 V
Rcoil = 0.7
Lcoil = 180
μ
H
Rcoil = 0.05
VCC = 20 V
VCC = 250 V
RL = 62
Pulse Width = 10
μ
s
INDUCTIVE TEST CIRCUIT
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
Vclamp = 250 V
RB adjusted to attain desired IB1
VCE
IC
Table 1. Test Conditions for Dynamic Performance
,
t
μ
s
tti
Figure 7. Inductive Switching Measurements
TIME
IB
VCE
90% IB1
tsr
tc
10%
VCEM
Figure 8. Inductive Switching Times
IC = 4 A
IC/IB = 4
TJ = 25
°
C
tc 100
°
C
tsv 100
°
C
tsv 25
°
C
tc 25
°
C
VBE, BASE–EMITTER VOLTAGE (VOLTS)
0
0.4
0.2
1.0
0.6
0.8
3
6
8
0
5
7
2
1
4
t
μ
s
0
0.9
0.3
2.7
1.5
2.1
1.2
0.6
3.0
1.8
2.4
IC
10%
ICM
2%
ICM
trv
tfi
90%
ICM
ICM
VCEM
Vclamp
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| MJE5850_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS |
| MJE5850G | 功能描述:兩極晶體管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE5850G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJE5851 | 功能描述:兩極晶體管 - BJT 8A 350V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE5851G | 功能描述:兩極晶體管 - BJT 8A 350V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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