參數(shù)資料
型號： MJE5851
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： PNP SILICON POWER TRANSISTORS
中文描述： 8 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁數(shù)： 1/8頁
文件大?。?/td> 302K
代理商： MJE5851
1
Motorola Bipolar Power Transistor Device Data
" !
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-
age, high–speed, power switching in inductive circuits where fall time is critical. They
are particularly suited for line operated switchmode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn–Off Times
100 ns Inductive Fall Time @ 25 C (Typ)
125 ns Inductive Crossover Time @ 25
°
C (Typ)
Operating Temperature Range –65 to +150 C
100 C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Leakage Currents
Peak (1)
IBM
8.0
Total Power Dissipation
PD
80
Watts
Temperature Range
Purposes: 1/8
″
from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE5850/D
8 AMPERE
PNP SILICON
POWER TRANSISTORS
300, 350, 400 VOLTS
80 WATTS
*Motorola Preferred Device
相關(guān)PDF資料
PDF描述
MJE5851 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS
MJE8503 POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS
MJE8503A POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS
MJL1302 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS
MJL1302 COMPLEMENTARY SILICON POWER TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE5851G 功能描述:兩極晶體管 - BJT 8A 350V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE5852 功能描述:兩極晶體管 - BJT PNP High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE5852_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE PNP POWER TRANSISTOR
MJE5852G 功能描述:兩極晶體管 - BJT 8A 400V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE6040 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING
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