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參數(shù)資料
| 型號： | MJE5850 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS |
| 中文描述： | 8 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 302K |
| 代理商： | MJE5850 |
1
Motorola Bipolar Power Transistor Device Data
" !
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-
age, high–speed, power switching in inductive circuits where fall time is critical. They
are particularly suited for line operated switchmode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn–Off Times
100 ns Inductive Fall Time @ 25 C (Typ)
125 ns Inductive Crossover Time @ 25
°
C (Typ)
Operating Temperature Range –65 to +150 C
100 C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Leakage Currents
Peak (1)
IBM
8.0
Total Power Dissipation
PD
80
Watts
Temperature Range
Purposes: 1/8
″
from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE5850/D
8 AMPERE
PNP SILICON
POWER TRANSISTORS
300, 350, 400 VOLTS
80 WATTS
*Motorola Preferred Device
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE5850 | PNP SILICON POWER TRANSISTORS |
| MJE5851 | PNP SILICON POWER TRANSISTORS |
| MJE5851 | 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS |
| MJE8503 | POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS |
| MJE8503A | POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE5850_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS |
| MJE5850G | 功能描述:兩極晶體管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE5850G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJE5851 | 功能描述:兩極晶體管 - BJT 8A 350V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE5851G | 功能描述:兩極晶體管 - BJT 8A 350V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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