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參數(shù)資料
| 型號(hào)： | MJE5742 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER DARLINGTON TRANSISTORS |
| 中文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221A-06, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 216K |
| 代理商： | MJE5742 |
2
Motorola Bipolar Power Transistor Device Data
DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)
(IC = 4 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 4 Adc, IB = 0.2 Adc, TC = 100 C)
Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Base–Emitter Saturation Voltage
Diode Forward Voltage (2) (IF = 5 Adc)
SWITCHING CHARACTERISTICS
Typical Resistive Load (Table 1)
Fall Time
Inductive Load, Clamped (Table 1)
(2) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
(2)
Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
200
—
VBE(sat)
400
—
—
—
—
—
2.2
2.5
2.4
2.5
—
—
—
Vdc
Vf
Vdc
IB1 = IB2 = 0.25 A, tp = 25
μ
s,
tr
—
—
0.5
2
—
—
μ
s
μ
s
(IC(pk) = 6 A, VCE(pk) = 250 Vdc
V
trv
IC
VCE
IB
90% IB1
tsv
IC(pk)
VCE(pk)
90% VCE(pk)
90% IC
tfi
10% VCE(pk)
10%
IC(pk)
2% IC
tti
tc
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
5
2000
h
VCE = 5 V
1
+25
°
C
2
10
1000
100
10
0
TC, CASE TEMPERATURE (
°
C)
Figure 1. Power Derating
0
40
120
160
60
P
SECOND BREAKDOWN DERATING
100
80
40
20
60
100
140
80
THERMAL DERATING
Figure 2. Inductive Switching Measurements
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base–Emitter Voltage
2.4
1.6
0.4
2
1.2
0.8
hFE = 20
0.2
10
2
0.5
1
5
TIME
150
°
C
–55
°
C
20
2.2
1.4
1.8
1
0.6
+150
°
C
+25
°
C
–55
°
C
TYPICAL CHARACTERISTICS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE5742G | 功能描述:達(dá)林頓晶體管 8A 400V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE5850 | 功能描述:兩極晶體管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE5850_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS |
| MJE5850G | 功能描述:兩極晶體管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE5850G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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