參數(shù)資料
型號(hào)： MJE5742
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： POWER DARLINGTON TRANSISTORS
中文描述： 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： CASE 221A-06, 3 PIN
文件頁數(shù)： 1/6頁
文件大?。?/td> 216K
代理商： MJE5742
1
Motorola Bipolar Power Transistor Device Data
The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power
switching in inductive circuits. They are particularly suited for operation in applications
such as:
Small Engine Ignition
Switching Regulators
Inverters
Emitter Base Voltage
Collector Current — Continuous
Total Power Dissipation
@ TA = 25 C
IC
8
8
Vdc
Adc
2
Watts
@ TC = 25 C
80
Watts
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
θ
JA
Max
1.56
Unit
C/W
Characteristic
OFF CHARACTERISTICS (2)
Collector–Emitter Sustaining Voltage
MJE5740
MJE5742
Symbol
VCEO(sus)
Min
300
400
Typ
—
—
Max
—
—
Unit
Vdc
—
—
1
mAdc
(2) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%.
(continued)
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE5740/D
POWER DARLINGTON
TRANSISTORS
8 AMPERES
300, 350, 400 VOLTS
80 WATTS
*Motorola Preferred Device
≈
100
≈
50
CASE 221A–06
REV 1
相關(guān)PDF資料
PDF描述
MJE5741 POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS
MJE5742 POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS
MJE5850 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS
MJE5850 PNP SILICON POWER TRANSISTORS
MJE5851 PNP SILICON POWER TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE5742G 功能描述:達(dá)林頓晶體管 8A 400V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE5850 功能描述:兩極晶體管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE5850_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS
MJE5850G 功能描述:兩極晶體管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE5850G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
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