參數(shù)資料
型號： MJE16106
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： POWER TRANSISTORS 8 AMPERES 400 VOLTS 100 AND 125 WATTS
中文描述： 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
文件頁數(shù)： 1/10頁
文件大?。?/td> 380K
代理商： MJE16106
1
Motorola Bipolar Power Transistor Device Data
Switchmode Bridge Series
. . . specifically designed for use in half bridge and full bridge off line converters.
Excellent Dynamic Saturation Characteristics
Rugged RBSOA Capability
Collector–Emitter Sustaining Voltage — VCEO(sus) — 400 V
Collector–Emitter Breakdown — V(BR)CES — 650 V
State–of–Art Bipolar Power Transistor Design
Fast Inductive Switching:
tfi = 30 ns (Typ) @ 100 C
tc = 65 ns (Typ) @ 100 C
tsv = 1.3
μ
s (Typ) @ 100 C
Ultrafast FBSOA Specified
100 C Performance Specified for:
RBSOA
Inductive Load Switching
Saturation Voltages
— Pulsed (1)
ICM
16
Base Current — Continuous
IB
6
Adc
0.8
Derated above 25 C
Operating and Storage Temperature
–55 to 150
W/ C
C
Soldering Purposes 1/8
″
from
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE16106/D
POWER TRANSISTORS
8 AMPERES
400 VOLTS
100 AND 125 WATTS
CASE 221A–06
TO–220AB
REV 1
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相關代理商/技術參數(shù)
參數(shù)描述
MJE16204 制造商:ON Semiconductor 功能描述:TRANSISTOR, NPN TO-220
MJE170 功能描述:兩極晶體管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE170G 功能描述:兩極晶體管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE170STU 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE171 功能描述:兩極晶體管 - BJT 3A 60V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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