參數(shù)資料
型號: MJE16106
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: POWER TRANSISTORS 8 AMPERES 400 VOLTS 100 AND 125 WATTS
中文描述: 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
文件頁數(shù): 5/10頁
文件大?。?/td> 380K
代理商: MJE16106
5
Motorola Bipolar Power Transistor Device Data
+15
150
100
100
μ
F
MTP8P10
MPF930
MPF930
MUR105
MJE210
150
500
μ
F
Voff
50
+10
MTP12N10
MTP8P10
RB1
RB2
A
1
μ
F
1
μ
F
Drive Circuit
*Tektronix AM503
*
P6302 or Equivalent
Scope — Tektronix
7403 or Equivalent
T1
Lcoil(ICpk)
VCC
Note: Adjust Voff to obtain desired VBE(off) at Point A.
T1 adjusted to obtain IC(pk)
T1
+V
–V
0 V
A
*IB
*IC
L
T.U.T.
MR918
Vclamp
VCC
IC(pk)
VCE(pk)
VCE
IB
IC
IB1
IB2
VCEO(sus)
L = 10 mH
RB2 =
VCC = 20 Volts
IC(pk) = 20 mA
Inductive Switching
L = 200
μ
H
RB2 = 0
VCC = 20 Volts
RB1 selected for desired IB1
RBSOA
L = 200
μ
H
RB2 = 0
VCC = 20 Volts
RB1 selected for desired IB1
Table 1. Inductive Load Switching
td and tr
ts and tf
H.P. 214
OR
EQUIV.
P.G.
50
RB = 8.5
*IB
*IC
T.U.T.
RL
VCC
Vin
0 V
11 V
tr
15 ns
*Tektronix AM503
*
P6302 or Equivalent
VCC
250 Vdc
RL
25
IC
5 A
IB
0.5 A
+15
150
100
100
μ
F
MTP8P10
MPF930
MPF930
MUR105
MJE210
150
500
μ
F
Voff
50
+10 V
MTP12N10
MTP8P10
RB1
RB2
A
1
μ
F
1
μ
F
T.U.T.
*IC
*IB
A
RL
VCC
V(off) adjusted
to give specified
off drive
VCC
250 V
IC
5 A
IB1
0.5 A
IB2
RB1
Per Spec
30
RB2
RL
Per Spec
25
Table 2. Resistive Load Switching
Figure 11. Definition of Dynamic Saturation
Measurement
t, TIME
IB1
VCE
90% IB1
VCE(dsat) = DYNAMIC SATURATION VOLTAGE
AND IS MEASURED FROM THE 90% POINT OF
IB1 (t = 0) TO A MEASUREMENT POINT ON THE
TIME AXIS (t1, t2 or t3 etc.)
t1
t2
t3
t4
0
0
t5
t6
t7
t8
Figure 12. Dynamic Saturation Voltage
0
IB, BASE CURRENT (AMPS)
1
4
0.5
2.5
V
5
t = 1
μ
s
1
2
1.5
0
3
2
MAXIMUM
TYPICAL
IC = 5 A
TJ = 25
°
C
t = 2
μ
s
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