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參數(shù)資料
| 型號： | MJE18604 |
| 廠商： | Motorola, Inc. |
| 英文描述： | POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS |
| 中文描述： | 功率晶體管3安培1600伏特，100瓦 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 217K |
| 代理商： | MJE18604 |
1
Motorola Bipolar Power Transistor Device Data
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The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
Tight dynamic characteristics and lot to lot low spread (
±
150 ns on storage time) make
it ideally suitable for light ballast applications. Therefore, there is no more a need to
guarantee an hfe window.
Main features:
Low Base Drive Requirement
High DC Current Gain (30 Typical) @ IC = 400 mA
Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active
Antisaturation (H2BIP) Structure which Minimizes the Spread
Integrated Collector–Emitter Free Wheeling Diode Matched with the Power
Transistor
Fully Characterized and Guaranteed Dynamic VCE(sat)
— Peak (1)
8
Base Current
— Peak (1)
IBM
4
*Total Device Dissipation @ TC = 25 C
PD
100
Watt
THERMAL CHARACTERISTICS
1/8
″
from case for 5 seconds
θ
JC
R
θ
JA
62.5
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤
10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18604D2/D
POWER TRANSISTORS
3 AMPERES
1600 VOLTS
100 WATTS
TO–220AB
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE18604D2 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS |
| MJE200 | 功能描述:兩極晶體管 - BJT 5A 25V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE200_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Plastic Transistors |
| MJE200G | 功能描述:兩極晶體管 - BJT 5A 25V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE200STU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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