參數(shù)資料
型號: MJD6039T4
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 4 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, CASE 369C-01, DPAK-3
文件頁數(shù): 4/5頁
文件大?。?/td> 121K
代理商: MJD6039T4
MJD6039
http://onsemi.com
4
V
CE
,COLLECT
OR-EMITTER
VOL
TAGE
(VOL
TS)
IC, COLLECTOR CURRENT (AMP)
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
Figure 9. “On” Voltages
0.04
300
0.06
0.2
2 k
800
4 k
h
FE
,DC
CURRENT
GAIN
3 k
0.1
0.6
25
°C
-55
°C
1 k
0.4
1
6 k
400
600
24
0.04
IC, COLLECTOR CURRENT (AMP)
1.4
1
V
,VOL
TAGE
(VOL
TS)
2.2
1.8
0.6
0.2
0.06
0.2
2
0.1
0.6
0.4
1
4
3.4
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.6
0.1
0.2
0.5
10
25
1
3
1
20
50
100
IC =
0.5 A
TJ = 125°C
VCE = 3 V
TJ = 125°C
1 A
2 A
4 A
TJ = 25°C
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3 V
VCE(sat) @ IC/IB = 250
TYPICAL ELECTRICAL CHARACTERISTICS
0.04
IC, COLLECTOR CURRENT (AMP)
0.06
0.2
0
0.1
0.6
0.4
1
- 4.8
23
4
+ 0.8
- 4
- 3.2
- 2.4
- 1.6
- 0.8
Figure 10. Temperature Coefficients
V
,TEMPERA
TURE
COEFFICIENTS
(mV/
C)°
θ
*APPLIED FOR IC/IB < hFE/3
25
°C to 150°C
- 55
°C to 25°C
25
°C to 150°C
25
°C to 150°C
qVC for VBE
qVC for VCE(sat)
10-1
0
-0.4
+0.2 +0.4 +0.6
-0.6
-0.2
+0.8
+1
+1.2 +1.4
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
,COLLECT
OR
CURRENT
(A)μ
I C
103
102
101
100
REVERSE
FORWARD
105
Figure 11. Collector CutOff Region
VCE = 30 V
TJ = 150°C
100
°C
25
°C
Figure 12. Darlington Schematic
BASE
EMITTER
COLLECTOR
≈ 8 k
≈ 60
NPN
MJD6039
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