參數(shù)資料
型號: MJD6039T4
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 4 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, CASE 369C-01, DPAK-3
文件頁數(shù): 2/5頁
文件大?。?/td> 121K
代理商: MJD6039T4
MJD6039
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
VCEO(sus)
80
Vdc
CollectorCutoff Current
(VCE = 40 Vdc, IB = 0)
ICEO
10
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 2 Adc, VCE = 4 Vdc)
hFE
1000
500
CollectorEmitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
VCE(sat)
2.5
Vdc
BaseEmitter On Voltage
(IC = 2 Adc, VCE = 4 Vdc)
VBE(on)
2.8
Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
25
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
100
pF
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
0.04
0.2
2
0.1
0.06
0.4
1
4
IC, COLLECTOR CURRENT (AMP)
VCC = 30 V
IC/IB = 250
t,TIME
(s)μ
2
1
0.8
0.6
0.4
0.2
ts
tf
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
tr
IB1 = IB2
TJ = 25°C
td @ VBE(off) = 0
PNP
NPN
4
0.6
V2
APPROX
+8 V
0
≈ 8 k
SCOPE
VCC
-30 V
RC
51
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
25
ms
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
+ 4 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
V1
APPROX
-12 V
TUT
RB
D1
≈ 120
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